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Floating-zone growth and characterization of single crystals of cobalt orthosilicate, Co2SiO4

✍ Scribed by Q. Tang; R. Dieckmann

Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
807 KB
Volume
317
Category
Article
ISSN
0022-0248

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✦ Synopsis

Good quality single crystals of high purity cobalt silicate, Co 2 SiO 4 , were successfully grown by the floating-zone method in air at atmospheric pressure along the three principle orientations. The grown crystals were 30-60 mm in length and 6-10 mm in diameter. Well developed facets were found on all crystals grown. Impurity levels and the degree of a desired excess of silicon in grown crystals were determined by using the ICP-AES technique. In addition, the presence of a small amount of inclusions in the matrix of grown crystals due to a small excess of silica was confirmed by TEM. Dislocation densities were determined upon etching; the observed densities were on the order of 10 5 -10 6 cm Γ€ 2 .

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