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Flexible Complementary Logic Gates Using Inkjet-Printed Polymer Field-Effect Transistors

✍ Scribed by Baeg, Kang-Jun; Khim, Dongyoon; Kim, Juhwan; Kim, Dong-Yu; Sung, Si-Woo; Yang, Byung-Do; Noh, Yong-Young

Book ID
118180283
Publisher
IEEE
Year
2013
Tongue
English
Weight
526 KB
Volume
34
Category
Article
ISSN
0741-3106

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## Abstract **Summary:** An all‐polymer field‐effect transistor (FET) fabricated using an inkjet printing technique is presented in this paper. Poly(3,4‐ethylenedioxythiophene) works as the source/drain/gate electrode material because of its good conductivity. Polypyrrole acts as the semiconducting