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Fission track annealing models and the concept of a single activation energy

โœ Scribed by H.S. Virk; S.K. Modgil; Gurinder Singh


Book ID
113278103
Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
216 KB
Volume
21
Category
Article
ISSN
0168-583X

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We present our investigations on the clustering, diffusion and electrical activation of ultra-low-energy ( 51 keV) implanted boron in crystalline silicon during annealing in the temperature range between 900 and 12008C. We show that during the initial stage of the annealing, boron is bound to non-di