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First-principles study of phosphorus diffusion in silicon: Interstitial- and vacancy-mediated diffusion mechanisms

✍ Scribed by Liu, Xiang-Yang; Windl, Wolfgang; Beardmore, Keith M.; Masquelier, Michael P.


Book ID
121705068
Publisher
American Institute of Physics
Year
2003
Tongue
English
Weight
357 KB
Volume
82
Category
Article
ISSN
0003-6951

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