First-principles study of doped Si and G
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H. Peelaers; B. Partoens; F.M. Peeters
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Article
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2008
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Elsevier Science
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English
โ 208 KB
Using density functional theory we calculate the formation energies for B and P doped Si and Ge nanowires which are oriented in the [1 1 0] direction. First the preferential position for the dopants is calculated in fully passivated nanowires. It is found that the dopants prefer the edge or near edg