First-principles studies of structural and electronic properties of layered C3N phases
β Scribed by Qianku Hu; Qinghua Wu; Haiyan Wang; Julong He; Guanglei Zhang
- Publisher
- John Wiley and Sons
- Year
- 2011
- Tongue
- English
- Weight
- 413 KB
- Volume
- 249
- Category
- Article
- ISSN
- 0370-1972
No coin nor oath required. For personal study only.
β¦ Synopsis
Abstract
The structural and electronic properties of layered C~3~N compound have been studied using ab initio pseudopotential densityβfunctional method within the localβdensity approximation. Total energy, lattice constant, band structure, and electron density of state are calculated. Among three possible C~3~N monolayer configurations, the monolayerβI structure with the highest symmetry is the most stable and predicted to be a narrowgap semiconductor with an indirect gap about 0.283βeV. Among four possible C~3~N stacking configurations constructed from hexagonal BN and graphite structures, C~3~NβIV constructed from hexagonal BN is expected to be the most stable structure and has metallic conducting behavior. The structural stability of layered C~3~N has also been checked by the calculations of the formation energies, elastic constants, and phonon frequencies.
π SIMILAR VOLUMES
Electronic structures of Mg 1-x Cr x O (x = 0, 0.25, 0.5, 0.75) were investigated based on first-principles calculations using generalized gradient approximation (GGA) and GGA + U. Different magnetic and electronic properties are predicted from the calculated spin-dependent density of states near th