𝔖 Bobbio Scriptorium
✦   LIBER   ✦

First principle study of hydrogen passivated Si(100) initial state of oxidation

✍ Scribed by A. Estève; M. Djafari Rouhani; D. Estève


Book ID
114086765
Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
356 KB
Volume
343-344
Category
Article
ISSN
0040-6090

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Origin of HfO2/GaAs interface states and
✍ Weichao Wang; Ka Xiong; Geunsik Lee; Min Huang; Robert M. Wallace; Kyeongjae Cho 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 739 KB

a b s t r a c t First principles calculations of HfO 2 /GaAs interfaces indicate that the interface states originate from the charge mismatch between HfO 2 and GaAs surfaces. We find that a model neutral interface (HfO 2 and GaAs surfaces terminated with two O and one Ga atoms per surface unit cell)