First Demonstration of Ultra-Thin SiGe-Channel Junctionless Accumulation-Mode (JAM) Bulk FinFETs on Si Substrate with PN Junction-Isolation Scheme

✍ Scribed by Kim, Dong-Hyun; Kim, Tae Kyun; Yoon, Young Gwang; Hwang, Byeong-Woon; Choi, Yang-Kyu; Cho, Byung Jin; Lee, Seok-Hee

• Book ID: 125953266
• Publisher: Institute of Electrical and Electronics Engineers
• Year: 2014
• Tongue: English
• Weight: 840 KB
• Volume: 2
• Category: Article
• ISSN: 2168-6734
• DOI: 10.1109/JEDS.2014.2326560