Finite-size effects in bismuth nanowires
β Scribed by Liu, Kai; Chien, C. L.; Searson, P. C.
- Book ID
- 118253938
- Publisher
- The American Physical Society
- Year
- 1998
- Tongue
- English
- Weight
- 90 KB
- Volume
- 58
- Category
- Article
- ISSN
- 1098-0121
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π SIMILAR VOLUMES
Measurements of the resistance of bismuth nanowires with several diameters and different quality reveal oscillations on the dependence of resistance under an uniaxial strain at T = 4.2 K. The amplitude of the oscillations is significant (38%) at helium temperature and becomes smearing at T = 77 K. T
## Abstract By considering silicon nanowires in real space, we have shown by ab initio theoretical calculations that unstable nanowires bend under relaxation. These nanowires usually incorporate in their surface silicon dihydrides parallel to the nanowires axis. On the other hand, nanowires without