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Finite element scheme for 3D cavities without spurious modes

โœ Scribed by Bardi, I.; Biro, O.; Preis, K.

Book ID
114547021
Publisher
IEEE
Year
1991
Tongue
English
Weight
348 KB
Volume
27
Category
Article
ISSN
0018-9464

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We use the Flaviart-Thomas-N&d&k space to discretize the current continuity equations of the drift-diffusion semiconductor models with Mixed Finite Element methods in 923. An asymptotic analysis of the behavionr of the scheme when the potential is very large is given.