Finite element modeling of a microelectronic structure under uniform thermal loading

✍ Scribed by A.F. Okyar; M. Gosz

• Publisher: Elsevier Science
• Year: 2001
• Tongue: English
• Weight: 303 KB
• Volume: 37
• Category: Article
• ISSN: 0168-874X
• DOI: 10.1016/s0168-874x(01)00077-4

✦ Synopsis

The deformation and thermal stresses that develop in copper/polyimide high-density interconnects subjected to thermal loading are investigated numerically. The ÿnite element method is used to analyze the response of a single-level test structure composed of a thin ÿlm mounted on top of a silicon substrate. The structure is assumed to be stress-free at an elevated temperature, and is then cooled at various rates. Based on the experimental observations we allow for di usionally accommodated sliding at the copper/tantalum interfaces by assuming a linear relationship between the shear traction and the conjugate sliding rate. The e ects of interfacial roughness and cooling rate on the overall mechanical response of the structure are investigated and the results are discussed.