๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

FinFET for high sensitivity ion and biological sensing applications

โœ Scribed by Sara Rigante; Livio Lattanzio; Adrian M. Ionescu

Book ID
104052839
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
572 KB
Volume
88
Category
Article
ISSN
0167-9317

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โœฆ Synopsis

A double-gate (DG) fin field effect transistor (FinFET) is discussed as new label-free ion and biological sensor. Simulations as function of channel doping, geometrical dimensions, operation point and materials investigated the device response to an external potential difference which provides a body threshold voltage modulation. The simulation results presented in this work clearly state the key features for an ultrasensitive FET based sensor: an enhancement low doped and partially gated transistor operating in weak-moderate inversion regime. The optimized sensitivity, obtained when the width of the fin is equal to the gate height (w NW $ h g ), reaches a value of 85% for an extraction current, I d , of 0.1 lA. These results pave the way for the fabrication process of an innovative CMOS compatible sensing system.

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