FinFET-a self-aligned double-gate MOSFET scalable to 20 nm

✍ Scribed by Hisamoto, D.; Wen-Chin Lee; Kedzierski, J.; Takeuchi, H.; Asano, K.; Kuo, C.; Anderson, E.; Tsu-Jae King; Bokor, J.; Chenming Hu

• Book ID: 114538468
• Publisher: IEEE
• Year: 2000
• Tongue: English
• Weight: 130 KB
• Volume: 47
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.887014