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Filamentary switching and memory action in thin anodic oxides

✍ Scribed by R. Pinto

Publisher
Elsevier Science
Year
1971
Tongue
English
Weight
158 KB
Volume
35
Category
Article
ISSN
0375-9601

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Switching and filamentary conduction in
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Switching in metal/organic/metal structures for non-volatile memory applications was investigated. The electrodes turned out to be crucial for obtaining reversible switching, whereas the organic material had only minor influence. Electron-only devices with aluminum electrodes showed reversible resis