✦ LIBER ✦

Field emission properties of gallium oxide micro- and nanostructures in the scanning electron microscope

✍ Scribed by López, Iñaki ;Nogales, Emilio ;Hidalgo, Pedro ;Méndez, Bianchi ;Piqueras, Javier

Publisher: John Wiley and Sons
Year: 2011
Tongue: English
Weight: 372 KB
Volume: 209
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.201127406

No coin nor oath required. For personal study only.

✦ Synopsis

Abstract

The field emission properties of gallium oxide nanowires grown by thermal evaporation–deposition have been investigated inside the chamber of a scanning electron microscope. Turn on electric fields and enhancement factors have been determined for Sn doped nanowires. X‐ray photoelectron spectroscopy measurements have been performed to calculate the work function of Sn doped Ga~2~O~3~. The results show improved field emission properties of Sn doped Ga~2~O~3~ nanowires, with a lower threshold field (below 1.0 V/µm). The obtained values are competitive with those achieved in other nanostructured materials, including carbon nanotubes.

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