Field-effect transistor performance of zinc oxide thin films derived from molecular based alkoxyalkyl zinc compounds
✍ Scribed by Hoffmann, Rudolf C. ;Dilfer, Stefan ;Issanin, Alexander ;Schneider, Jörg J.
- Publisher
- John Wiley and Sons
- Year
- 2011
- Tongue
- English
- Weight
- 360 KB
- Volume
- 208
- Category
- Article
- ISSN
- 0031-8965
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✦ Synopsis
Abstract
Solution processed zinc oxide thin films are derived from different organometallic alkoxyalkyl zinc compounds [Zn(OR~1~)R~2~]~4~ and their performance in field‐effect transistors (FETs) has been studied systematically. The influence of various residues R~1~ or R~2~ on the decomposition behaviour of the organometallic precursors and the resulting film morphology is discussed. The performance of the FETs could be enhanced by employment of a post‐processing treatment with hydrogen plasma, leading to higher electron carrier mobilities as well as stable on/off ratios.
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