Field-effect Self-mixing Terahertz Detectors

✍ Scribed by Jiandong Sun (auth.)

• Publisher: Springer-Verlag Berlin Heidelberg
• Year: 2016
• Tongue: English
• Leaves: 139
• Series: Springer Theses
• Edition: 1
• Category: Library

✦ Synopsis

A comprehensive device model considering both spatial distributions of the terahertz field and the field-effect self-mixing factor has been constructed for the first time in the thesis. The author has found that it is the strongly localized terahertz field induced in a small fraction of the gated electron channel that plays an important role in the high responsivity. An AlGaN/GaN-based high-electron-mobility transistor with a 2-micron-sized gate and integrated dipole antennas has been developed and can offer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By further reducing the gate length down to 0.2 micron, a noise-equivalent power of 6 pW/Hz1/2 has been achieved. This thesis provides detailed experimental techniques and device simulation for revealing the self-mixing mechanism including a scanning probe technique for evaluating the effectiveness of terahertz antennas. As such, the thesis could be served as a valuable introduction towards further development of high-sensitivity field-effect terahertz detectors for practical applications.

✦ Table of Contents

Front Matter....Pages i-xviii
Introduction....Pages 1-18
Field-Effect Self-Mixing Mechanism and Detector Model....Pages 19-39
Realization of Terahertz Self-Mixing Detectors Based on AlGaN/GaN HEMT....Pages 41-86
Realization of Resonant Plasmon Excitation and Detection....Pages 87-96
Scanning Near-Field Probe for Antenna Characterization....Pages 97-105
Applications....Pages 107-117
Conclusions and Outlook....Pages 119-122
Back Matter....Pages 123-126

✦ Subjects

Microwaves, RF and Optical Engineering; Optics, Optoelectronics, Plasmonics and Optical Devices; Semiconductors; Solid State Physics