Field effect mobility of F16PcCu films in various gas atmospheres
✍ Scribed by Hirokazu Tada; Hiroshi Touda; Masaki Takada; Kazumi Matsushige
- Publisher
- John Wiley and Sons
- Year
- 1999
- Tongue
- English
- Weight
- 147 KB
- Volume
- 03
- Category
- Article
- ISSN
- 1088-4246
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✦ Synopsis
The electron mobility of hexadecafluorophthalocyaninato-copper ( F ~16~ PcCu ) films was evaluated based on field effect measurements in vacuum and in various gas atmospheres. An Arrhenius plot of the mobility showed that the carrier transport followed a thermally activated hopping mechanism with an activation energy of 0.28 eV. The mobility evaluated for freshly prepared films in ultrahigh vacuum was 2.0 × 10^−3^ cm ^2^ V ^−1^ s ^−1^ at room temperature. The electrical conductivity and carrier density were 4.4 × 10^−5^ S cm ^−1^ and 1.4 × 10^17^ cm ^−3^ respectively. The high carrier density indicated the existence of impurities acting as electron donors in the films. The field effect carrier mobility increased to 5.7 × 10^−3^ cm ^2^ V ^−1^ s ^−1^ in NH ~3~ atmosphere (100%, 1 atm) and decreased by 75% in the presence of O ~2~ gas (100%, 1 atm). A quick recovery of mobility was observed when the gas molecules were evacuated, indicating a low capability of gas adsorption.