Ferromagnetism in II–VI-based semiconductor structures

✍ Scribed by J. Cibert; D. Ferrand; H. Boukari; S. Tatarenko; A. Wasiela; P. Kossacki; T. Dietl

• Book ID: 104427923
• Publisher: Elsevier Science
• Year: 2002
• Tongue: English
• Weight: 167 KB
• Volume: 13
• Category: Article
• ISSN: 1386-9477
• DOI: 10.1016/s1386-9477(02)00177-7

✦ Synopsis

Experimental results obtained on Zn1-xMnxTe layers and Cd1-xMnxTe quantum wells are surprisingly well understood in the framework of a mean ÿeld model of the carrier-induced ferromagnetic transition, provided the real structure of the valence band is properly taken into account. Here we put the emphasis on e ects leading to deviations from the standard model: RKKY oscillations in Zn1-xMnxTe when the Mn concentration is not high enough with respect to the carrier density, electronic disorder and localization at low carrier density in Zn1-xMnxTe epilayers and Cd1-xMnxTe quantum wells. Importantly, the modulation of magnetic properties through modulation of the carrier density, either optically or using the electric potential in a pin diode, is demonstrated.