Ferromagnetism in Dilute Magnetic Semiconductors through Defect Engineering: Li-Doped ZnO

✍ Scribed by Yi, J. B.; Lim, C. C.; Xing, G. Z.; Fan, H. M.; Van, L. H.; Huang, S. L.; Yang, K. S.; Huang, X. L.; Qin, X. B.; Wang, B. Y.; Wu, T.; Wang, L.; Zhang, H. T.; Gao, X. Y.; Liu, T.; Wee, A. T. S.; Feng, Y. P.; Ding, J.

• Book ID: 120248216
• Publisher: The American Physical Society
• Year: 2010
• Tongue: English
• Weight: 519 KB
• Volume: 104
• Category: Article
• ISSN: 0031-9007
• DOI: 10.1103/PhysRevLett.104.137201