Ferromagnetism and ferromagnetic resonance in Mn and As co-implanted Si and GaAs

✍ Scribed by N.A. Sobolev; M.A. Oliveira; V.S. Amaral; A. Neves; M.C. Carmo; W. Wesch; O. Picht; E. Wendler; U. Kaiser; J. Heinrich

• Publisher: Elsevier Science
• Year: 2006
• Tongue: English
• Weight: 255 KB
• Volume: 126
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/j.mseb.2005.09.039

✦ Synopsis

Ferromagnetism persisting above 375 K and anisotropic ferromagnetic resonance (FMR) spectra have been detected for the first time in Si co-implanted with Mn and As and annealed under appropriate conditions. For comparison, semi-insulating GaAs samples have been implanted with the same ions and subsequently annealed. They also exhibit ferromagnetism with a Curie temperature well in excess of 375 K. High-resolution transmission electron microscopy (HR TEM) performed on the samples with the best magnetic characteristics has shown the presence of nanoclusters due to the segregation of the implanted species in both Si and GaAs. The angular dependence of the FMR spectra reveals the existence of magnetic entities with the hard magnetization axes aligned along the four equivalent 1 1 1 crystal axes. The spectra are very similar in Si and GaAs, indicating that hexagonal MnAs clusters might be formed in Si.