Cover......Page 1
Title Page......Page 5
Copyright......Page 6
Contents......Page 7
Chapter 1 General Introduction: Smart Materials, Sensors, and Actuators......Page 13
1.1 Smart System......Page 14
1.2 Device Application of Ferroelectric Materials......Page 17
1.2.1 Piezoelectric Device Applications......Page 18
1.2.2 Infrared Sensor......Page 19
1.2.3 Ferroelectric RAM (FeRAM)......Page 20
1.3.2 Magnetic Field Sensor Based on Multiferroic Device......Page 21
1.4 Ferroelastic Material and Device Application......Page 22
1.5 Scope of This Book......Page 24
References......Page 25
2.1.1 P–E Loop......Page 27
2.1.2.1 Ferroelectric–Dielectric......Page 28
2.1.2.2 Ferroelectric–Piezoelectric......Page 29
2.2.1 Structure‐Induced Phase Change from Paraelectric to Ferroelectric......Page 30
2.2.2 Soft Phonon Mode......Page 31
2.3.1 Landau Free Energy and Curie–Weiss Law......Page 33
2.3.2 Landau Theory of First‐Order Phase Transition......Page 35
2.3.3 Landau Theory of a Second‐Order Phase Transition......Page 38
2.4.2 Ferroelectric Switching......Page 40
2.5.1 From BaTiO3 to SrTiO3......Page 41
2.5.2 From PbTiO3 to PbZrO3......Page 44
2.5.3 Antiferroelectric PbZrO3......Page 45
2.5.3.1 Pb(Zrx Ti1−x)O3 (PZT)......Page 47
2.5.4 Relaxor Ferroelectrics......Page 48
2.5.4.1 Relaxor Ferroelectrics: PMN‐xPT Single Crystal......Page 49
2.5.4.2 Polar Nano Regions......Page 50
2.5.4.3 Morphotropic Phase Boundary (MPB) of PMN‐PT Crystal......Page 52
2.6 Ferroelectric Domain and Phase Field Calculation......Page 53
References......Page 54
3.1 Ferroelectric Random‐Access Memory......Page 59
3.2 Ferroelectric Tunneling Non‐volatile Memory......Page 62
3.2.1 Tunneling Models......Page 63
3.2.2 Metal–Ferroelectric–Semiconductor Tunnel Junction......Page 67
3.2.3 Ferroelectric Tunneling Memristor......Page 68
3.2.4 Strain Modulation to Ferroelectric Memory......Page 69
3.3.1 Pyroelectric Coefficient......Page 70
3.3.2 Pyroelectric Infrared Sensor......Page 71
3.3.3 Pyroelectric Figures of Merit......Page 72
3.4 Application in Microwave Device......Page 75
3.5 Ferroelectric Photovoltaics......Page 77
3.6 Electrocaloric Effect......Page 79
References......Page 80
4.1 P–E Loop Measurement......Page 85
4.2 Temperature‐Dependent Dielectric Permittivity Measurement......Page 88
4.3.1 Imaging Mechanism of PFM......Page 89
4.3.2 Out‐of‐plane Polarization (OPP) and In‐plane Polarization (IPP) PFM......Page 92
4.3.2.1 Electrostatic Force in PFM......Page 95
4.3.2.2 Perspectives of PFM Technique......Page 96
4.4 Structural Characterization......Page 98
4.5 Domain Imaging and Polarization Mapping by Transmission Electron Microscopy......Page 99
4.5.1 Selected Area Electron Diffraction (SAED)......Page 100
4.5.2 Convergent Beam Electron Diffraction (CBED) for Tetragonality Measurement......Page 103
References......Page 104
5.1 Size Limit of Ferroelectricity......Page 107
5.2 Ferroelectricity in Emerging 2D Materials......Page 108
5.3 Ferroelectric Vortex......Page 111
5.4 Molecular Ferroelectrics......Page 116
5.5 Ferroelectricity in HfO2 and ZrO2 Fluorite Oxide Thin Films......Page 118
5.6 Ferroic Properties in Hybrid Perovskites......Page 126
References......Page 129
6.1 General Introduction to Piezoelectric Effect......Page 135
6.2 Piezoelectric Constant Measurement......Page 136
6.2.1 Piezoelectric Charge Constant......Page 137
6.2.2 Piezoelectric Voltage Constant......Page 138
6.2.5 Elastic Compliance......Page 139
6.2.6 Electromechanical Coupling Factor......Page 140
6.2.6.1 How to Measure Electromechanical Coupling Factor?......Page 141
6.3 Equivalent Circuit......Page 144
6.4.1 Length Extensional Mode of a Rod......Page 147
6.4.2 Extensional Vibration Mode of a Long Plate......Page 150
6.4.3 Thickness Shear Mode of a Thin Plate......Page 151
6.4.4 Thickness Mode of a Thin Disc/Plate......Page 152
References......Page 153
7.1.1 Structure of Ultrasonic Transducers......Page 155
7.1.2 Theoretical Models of Ultrasonic Transducer (KLM Model)......Page 157
7.1.3.1 Bandwidth (BW)......Page 159
7.1.3.3 Resolution......Page 160
7.1.5 Piezoelectric Film Application in Ultrasound Transducers......Page 161
7.2 Ultrasonic Motor......Page 162
7.2.1 Terminologies......Page 163
7.2.2 Design of USM......Page 165
7.3 Surface Acoustics Wave Devices......Page 166
7.3.2 Acoustic Wave......Page 167
7.3.3 Piezoelectric Property Considerations for SAW Devices......Page 169
7.3.4 Characterization of SAW Devices......Page 171
7.3.5 Lead‐Free Piezoelectric Materials......Page 173
References......Page 175
8.1 General Introduction to Ferromagnetics......Page 177
8.2 Ferromagnetic Phase Transition: Landau Free‐Energy Theory......Page 180
8.3 Domain and Domain Wall......Page 181
8.4.1 Anisotropic Magnetoresistance (AMR)......Page 183
8.4.2 Giant Magnetoresistance (GMR)......Page 184
8.4.3 Colossal Magnetoresistance (CMR)......Page 187
8.4.4 Tunneling Magnetoresistance (TMR)......Page 188
8.4.4.1 Spin‐Transfer Torque Random‐Access Memory (STT‐RAM)......Page 189
8.5 Magnetostrictive Effect and Device Applications......Page 190
8.5.1 Magnetostrictive Properties of Terfenol‐D......Page 192
8.5.2 Magnetostrictive Ultrasonic Transducer......Page 195
8.5.3 Magnetoelastic Effect......Page 196
8.5.3.1 Magnetomechanical Strain Gauge......Page 197
8.6.1 Vibrating Sample Magnetometer (VSM)......Page 198
8.6.2 Superconducting Quantum Interference Device (SQUID)......Page 199
8.6.3 Magnetic Force Microscopy (MFM)......Page 200
8.6.4 Magneto‐Optical Kerr Effect (MOKE)......Page 201
8.7.2 Anomalous Hall Effect......Page 203
8.7.3 Spin Hall Effect......Page 204
References......Page 205
9.1 Introduction on Multiferroic......Page 209
9.3 Why Are There so Few Magnetic Ferroelectrics?......Page 211
9.4 Single Phase Multiferroic Materials......Page 212
9.4.1 Switching Mechanism in BFO Films......Page 216
9.5 ME Composite Materials......Page 217
9.6.1 PZT/CFO Multilayered Heterostructures......Page 219
9.6.2 Ferroelectric Properties of PZT/CFO Multilayers......Page 221
References......Page 224
10.1 ME Composite Devices......Page 229
10.1.1 Effect of Preload Stress......Page 233
10.2 Memory Devices Based on Multiferroic Thin Films......Page 235
10.3 Memory Devices Based on Multiferroic Tunneling......Page 236
References......Page 241
11.1 Shape Memory Alloy......Page 243
11.1.1 SMA Phase Change Mechanism......Page 244
11.1.2 Nonlinearity in SMA......Page 245
11.1.4 Superelastic Effect (SE)......Page 247
11.1.5 Application Examples of SMAs......Page 248
11.2 Ferromagnetic Shape Memory Alloys......Page 249
11.2.1 Formation of Twin Variants......Page 250
11.2.2 Challenges for Ni–Mn–Ga SMA......Page 254
11.2.3 Device Application of MSMA......Page 255
References......Page 256
Index......Page 259
EULA......Page 265