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Ferroelectrics for non-volatile memories

✍ Scribed by R. Cuppens; P.K. Larsen; G.A.C.M. Spierings


Book ID
103598749
Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
535 KB
Volume
19
Category
Article
ISSN
0167-9317

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## Abstract For low cost memory devices like ferroelectric field‐effect transistors (FeFETs) or cross bar arrays, organic materials are important, due to their processability from solutions at room temperature. The copolymer Poly[vinylidene fluoride trifluoroethylene] (P[VDF/TrFE]) is a candidate f