<p><P>Ferroelectric thin films continue to attract much attention due to their developing, diverse applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic proper
Ferroelectric Thin Films: Basic Properties and Device Physics for Memory Applications
✍ Scribed by Yoshihiro Ishibashi (auth.), Masanori Professor Okuyama, Yoshihiro Ishibashi (eds.)
- Publisher
- Springer-Verlag Berlin Heidelberg
- Year
- 2005
- Tongue
- English
- Leaves
- 263
- Series
- Topics in Applied Physics 98
- Edition
- 1
- Category
- Library
No coin nor oath required. For personal study only.
✦ Synopsis
Ferroelectric thin films continue to attract much attention due to their developing, diverse applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. All authors are acknowledged experts in the field.
✦ Table of Contents
Theoretical Aspects of Phase Transitions in Ferroelectric Thin Films....Pages 3-23
Chemical Solution Depositionof Layer-Structured Ferroelectric Thin Films....Pages 25-59
Pb-Based Ferroelectric Thin Films Prepared by MOCVD....Pages 59-77
Spontaneous Polarization and Crystal Orientation Control of MOCVD PZT and Bi 4 Ti 3 O 12 -Based Films....Pages 77-91
Rhombohedral PZT Thin Films Prepared by Sputtering....Pages 91-105
Scanning Nonlinear Dielectric Microscopy....Pages 105-126
Analysis of Ferroelectricity and Enhanced Piezoelectricity near the Morphotropic Phase Boundary....Pages 127-148
Correlation Between Domain Structures and Dielectric Properties in Single Crystals of Ferroelectric Solid Solutions....Pages 147-162
Relaxor Superlattices: Artificial Control of the Ordered–Disordered State of B -Site Ions in Perovskites....Pages 161-175
Physics of Ferroelectric Interfaces: An Attempt at Nanoferroelectric Physics....Pages 177-199
Preparation and Properties of Ferroelectric–Insulator–Semiconductor Junctions Using YMnO 3 Thin Films....Pages 199-220
Improvement of Memory Retention in Metal–Ferroelectric–Insulator–Semiconductor (MFIS) Structures....Pages 219-241
✦ Subjects
Magnetism, Magnetic Materials; Crystallography; Electronics and Microelectronics, Instrumentation; Metallic Materials; Physics and Applied Physics in Engineering
📜 SIMILAR VOLUMES
Because this book is a basic introduction to the chemistry, materials science, processing, and physics of the materials from which integrated ferroelectrics are made, newcomers to this field, as well as veterans, will find it self-contained and invaluable in acquiring the diverse elements requisite
<p>The past five years have witnessed some dramatic developments in the general area of ferroelectric thin films materials and devices. Ferroelectrics are not new materials by any stretch ofimagination. Indeed, they have been known since the early partofthis century and popular ferroelectric materia
<p></p><p><span>This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental d
<p></p> <p>This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device
<p><p>This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device phys