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Ferroelectric random access memory based on one-transistor–one-capacitor structure for flexible electronics

✍ Scribed by Mao, D.; Mejia, I.; Salas-Villasenor, A.L.; Singh, M.; Stiegler, H.; Gnade, B.E.; Quevedo-Lopez, M.A.


Book ID
121210861
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
605 KB
Volume
14
Category
Article
ISSN
1566-1199

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