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Ferroelectric Properties of Porous Silicon

✍ Scribed by Q. Chen; X. Li; Y. Zhang; Y. Qian


Publisher
John Wiley and Sons
Year
2002
Tongue
English
Weight
196 KB
Volume
14
Category
Article
ISSN
0935-9648

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The morphological di †erences between porous silicon formed in the dark or under illumination have been studied by means of gravimetric measurements, transmission electron microscopy, infrared spectroscopy and cyclic voltammetry. Photoetching has been found to give rise to a complex surface structur