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Ferroelectric memories for security and identification purposes

✍ Scribed by Kaufman, A.B.


Book ID
114589713
Publisher
IEEE
Year
1969
Tongue
English
Weight
317 KB
Volume
16
Category
Article
ISSN
0018-9383

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## Abstract For low cost memory devices like ferroelectric field‐effect transistors (FeFETs) or cross bar arrays, organic materials are important, due to their processability from solutions at room temperature. The copolymer Poly[vinylidene fluoride trifluoroethylene] (P[VDF/TrFE]) is a candidate f