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Femtosecond transient reflectivity measurements as a probe for process-induced defects in silicon

✍ Scribed by A. Esser; W. Kütt; M. Strahnen; G. Maidorn; H. Kurz


Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
408 KB
Volume
46
Category
Article
ISSN
0169-4332

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