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Femtosecond photon echo and four-wave mixing studies on GaAs/AlGaAs heterostructure at room temperature

✍ Scribed by K.V. Ivanin; A.V. Leontyev; V.S. Lobkov; V.V. Samartsev

Publisher: John Wiley and Sons
Year: 2010
Tongue: English
Weight: 233 KB
Volume: 7
Category: Article
ISSN: 1612-2011
DOI: 10.1002/lapl.201010035

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✦ Synopsis

We report femtosecond photon echo and fourwave mixing measurements performed on GaAs/AlGaAs heterostructure at room temperature. In femtosecond photon echo experiment the dephasing time was obtained, found to vary between 40 and 55 fs depending on carrier density. The dependence showed a power-law behavior T2 ∝ N -0.22 , which indicates that major phase coherence loss is due to screened Coulomb electron-electron interaction. Transient grating experiments yielded the electron diffusion coefficient value of 200 cm 2 /s and electron relaxation time equal to 3 ns.

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