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Feasibility of an Ag-alloy film as a thin-film transistor liquid-crystal display source/drain material

โœ Scribed by C. O. Jeong; N. S. Roh; S. G. Kim; H. S. Park; C. W. Kim; D. S. Sakong; J. H. Seok; K. H. Chung; W. H. Lee; Dongwen Gan; Paul S. Ho; B. S. Cho; B. J. Kang; H. J. Yang; Y. K. Ko; J. G. Lee


Book ID
107452805
Publisher
Springer US
Year
2002
Tongue
English
Weight
363 KB
Volume
31
Category
Article
ISSN
0361-5235

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An n + -doped-layer-free microcrystalline silicon thin-film transistor (ยตc-Si TFT) with Al alloy as the source/drain (S/D) electrode was fabricated and investigated. The device showed a field-effect mobility of 0.28 cm 2 /V s and a threshold voltage of 5.3 V. The mobility measured in the linear regi