FDTD design of a novel short backfire antenna for millimeter-wave wireless LAN applications
✍ Scribed by Shiwen Yang; Soon Hie Tan; Jeffrey Shiang Fu
- Publisher
- John Wiley and Sons
- Year
- 2000
- Tongue
- English
- Weight
- 106 KB
- Volume
- 24
- Category
- Article
- ISSN
- 0895-2477
No coin nor oath required. For personal study only.
✦ Synopsis
Figure 8 Variations of different gains with frequency for large gate length
Conclusions
The microwave characteristics of a short-gate-length IGFET in terms of scattering parameters have been obtained. The expressions so developed include the various effects such as the substrate effect, the fringing field effect, and the effect of gate and drain contact pads. The result so obtained shows that the circuits with a shorter gate-length device are useful in microwave frequency applications. Since the analysis relates the intrinsic network parameters to the basic device physical parameters, it should be possible to exploit them, not only for the calculation of high-frequency circuit performance of various types of MOSTs, but also to improve the device performance through proper design and optimization of the structure itself.