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Far-Infrared Absorption on Dislocations in Plastically Deformed pSi

✍ Scribed by Bazhenov, A. ;Kveder, V. ;Krasilnikova, L. ;Rezchikov, K.

Publisher
John Wiley and Sons
Year
1993
Tongue
English
Weight
307 KB
Volume
137
Category
Article
ISSN
0031-8965

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## Abstract It is shown that after plastic deformation in clean conditions the most efficient recombination defects in Si are dislocation trails. The DLTS spectrum associated with the defects in the dislocation trails in p‐Si are revealed. The thermal annealing effect on the electrical properties o