Failure of potassium dimer formation on the β-SiC(100)-c(4 × 2) surface
✍ Scribed by Barry Haycock; José Ortega; James P. Lewis
- Publisher
- John Wiley and Sons
- Year
- 2011
- Tongue
- English
- Weight
- 303 KB
- Volume
- 248
- Category
- Article
- ISSN
- 0370-1972
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✦ Synopsis
Abstract
Using ab initio molecular dynamics, we study the formation of dimers on the β‐SiC(100)‐c(4 × 2) surface. According to previously published experimental results of Derycke et al. [Appl. Phys. Lett. 88(2), 022105 (2006)] (using scanning tunneling spectroscopy, core‐level photoemission spectroscopy, and low‐energy electron diffraction) the (100)‐c(4 × 2) surface is highly prone to form potassium dimers. In their work, potassium atoms fill adjacent well‐defined pedestal sites when there are lower coverages of potassium deposited onto the surface (∼0.16 monolayers). Contrary to the work by Derycke et al., we find that potassium does not prefer to form dimers on the (100)‐c(4 × 2) surface, but rather potassium tends to reconstruct (after annealing simulations) by choosing distant pedestal sites in order to minimize the overlap of the ionic radii of the potassium atoms.
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