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Failure behavior of ITO diffusion barrier between electroplating Cu and Si substrate annealed in a low vacuum

✍ Scribed by S.H. Hsieh; C.M. Chien; W.L. Liu; W.J. Chen


Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
437 KB
Volume
255
Category
Article
ISSN
0169-4332

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