Factors Affecting the Quantification of Boron in SiO2 and Si by Sputtered Neutral Mass Spectrometry

✍ Scribed by Wise, Michael L.; Moriya, Netzer; Downey, Stephen W.

• Publisher: John Wiley and Sons
• Year: 1996
• Tongue: English
• Weight: 401 KB
• Volume: 24
• Category: Article
• ISSN: 0142-2421
• DOI: 10.1002/(sici)1096-9918(199606)24:6<371::aid-sia123>3.0.co;2-g

✦ Synopsis

Boron implanted in SiOz and Si is characterized using sputtered neutral mass spectrometry (SNMS). Nonresonant, ultrahigh-intensity postionization finds that a fraction of boron not sputtered as neutral atoms from SiO, and Si is partially present in the form of BO and BSi molecules. Total boron detection is matrix sensitive. A deficit in the boron measured in SiO, suggests that boron may go partially undetected due to the substantial production of secondary ions during sputtering.