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-factor in self-assembled In(Ga)As quantum dots through strain engineering

✍ Scribed by Nakaoka, T.; Saito, T.; Tatebayashi, J.; Hirose, S.; Usuki, T.; Yokoyama, N.; Arakawa, Y.

Book ID
121340495
Publisher
The American Physical Society
Year
2005
Tongue
English
Weight
174 KB
Volume
71
Category
Article
ISSN
1098-0121

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Quantum dots of InSb, GaSb, and AlSb were grown on GaAs by molecular beam epitaxy and characterized by atomic force microscopy (AFM), photoluminescence, and Raman spectroscopy. AFM measurements reveal that InSb morphology can be a function of the initial GaAs surface reconstruction. Photoluminescenc