Fabrication of sub-half μm patterns for MOS devices by means of X-ray lithography and plasma etching

A novel X-ray mask concept for mex&match

A novel X-ray mask concept for mex&match lithography fabrication of MOS devices by synchrotron radiation lithography

✍ E. Di Fabrizio; L. Grella; M. Gentili; M. Baciocchi; L. Mastrogiacomo; Sang-Soo 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 253 KB

The investigated X-ray steppers Karl Suss XRS 200/1 and XRS 200/3 use an optical alignment system for adjusting the parallelism, for gap setting and alignment between mask and wafer. In general the optical signal, when mask and wafer are at gap distance, is dependent on the optical characteristics (