Fabrication of SnxGe1 − x thin films with non-equilibrium composition

✍ Scribed by JC Bennett; R.F. Egerton

• Book ID: 104265786
• Publisher: Elsevier Science
• Year: 1996
• Tongue: English
• Weight: 516 KB
• Volume: 47
• Category: Article
• ISSN: 0042-207X
• DOI: 10.1016/s0042-207x(96)00219-9

✦ Synopsis

Amorphous films of Sn/Ge alloy were produced by coevaporation of tin and germanium onto substrates held at or below room temperature. A compositional gradient was introduced by means of a mask placed at an appropriate distance from the substrate; transmission electron microscopy and energy-dispersive X-ray analysis were used to determine the local structure and chemical composition. The as-deposited films were amorphous and single-phase up to 15 at% Sn, or up to 45 at% Sn for substrates cooled to 100 K during deposition. When heated to 12O"C, the films crystallized to a diamond-cubic structure, with some precipitation of metallic tin.