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Fabrication of SiC epitaxial structures for devices by the method of sublimation in an open system

✍ Scribed by M.M. Anikin; A.A. Lebedev; S.N. Pyatko; A.M. Strel'chuk; A.L. Syrkin

Publisher: Elsevier Science
Year: 1992
Tongue: English
Weight: 259 KB
Volume: 11
Category: Article
ISSN: 0921-5107
DOI: 10.1016/0921-5107(92)90201-j

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