Fabrication of p–n junction diodes from phthalocyanine and electropolymerized perylene derivatives
✍ Scribed by TERUHISA KUDO; MUTSUMI KIMURA; KENJI HANABUSA; HIROFUSA SHIRAI
- Publisher
- John Wiley and Sons
- Year
- 1998
- Tongue
- English
- Weight
- 83 KB
- Volume
- 02
- Category
- Article
- ISSN
- 1088-4246
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✦ Synopsis
Perylene derivative films doped with metal ion were deposited on indium tin oxide (ITO)-coated glass electrodes by electrodeposition from solutions of N,N 4,9, and CaCl 2 , PbCl 2 , ZnCl 2 or CoBr 2 as a supporting electrolyte in N,Ndimethylformamide (DMF). The p-n junction diodes consisting of a p-type phthalocyanine (Pc) sublimed film and an n-type hph-PTC electrodeposited film doped with metal ion exhibited Zener-type breakdown and photocurrent enhancement. The device with a p-n junction consisting of a Pc sublimed film and an hph-PTC electrodeposited film doped with Ca 2 showed the largest amplification of photocurrent. This result suggests that the dopant ion in hph-PTC is an important factor in the preparation of p-n junction diodes.