Fabrication of platinum and ruthenium Schottky contacts to n-GaAs using spin-on sources

Thermal stability of Co, Ni, Pt or Ru Sc

Thermal stability of Co, Ni, Pt or Ru Schottky contacts on n-Si and defects introduced thereon during contacts fabrication using electron beam deposition

✍ Cloud Nyamhere; A. Chawanda; A.G.M. Das; F.D. Auret; M. Hayes 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 264 KB

When using Schottky barrier diodes (SBDs) on silicon (Si) to study the thermal stability of radiation-induced defects, point defects injection into the silicon substrate can occur at temperatures where silicidation occurs. These injected point defects can react with the radiation-induced defects and