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Fabrication of one-dimensional “trenched” GaN nanowires and their interconnections

✍ Scribed by Lebedev, V. ;Cengher, D. ;Fischer, M. ;Tonisch, K. ;Cimalla, V. ;Niebelschütz, M. ;Ambacher, O.

Publisher
John Wiley and Sons
Year
2007
Tongue
English
Weight
483 KB
Volume
204
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

In this work, a new approach of nanowire fabrication utilizing selective growth of planar GaN wires embedded into the insulating matrix is reported. The selective growth has been released by means of a Si__~x~__ N__~y~__ mask and a metal‐organic chemical vapour deposition. The main advantage of the investigated fabrication process is a planar geometry of the wires allowing the use of conventional interconnection techniques such as optical lithography. Design, fabrication technology and interconnection geometry of some early examples are discussed. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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