Fabrication of Normally Off AlGaN/GaN MOSFET Using a Self-Terminating Gate Recess Etching Technique

✍ Scribed by Xu, Zhe; Wang, Jinyan; Liu, Yang; Cai, Jinbao; Liu, Jingqian; Wang, Maojun; Yu, Min; Xie, Bing; Wu, Wengang; Ma, Xiaohua; Zhang, Jincheng

• Book ID: 120607543
• Publisher: IEEE
• Year: 2013
• Tongue: English
• Weight: 503 KB
• Volume: 34
• Category: Article
• ISSN: 0741-3106
• DOI: 10.1109/LED.2013.2264494