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Fabrication of nanometer-scale side-gated silicon field effect transistors with an atomic force microscope

✍ Scribed by Campbell, P. M.; Snow, E. S.; McMarr, P. J.


Book ID
121853654
Publisher
American Institute of Physics
Year
1995
Tongue
English
Weight
424 KB
Volume
66
Category
Article
ISSN
0003-6951

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