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Fabrication of monolithically-integrated InAlAs/InGaAs/InP HEMTs and InAs/AlSb/GaSb resonant interband tunneling diodes

✍ Scribed by Fay, P.; Lu Jiang; Xu, Y.; Bernstein, G.H.; Chow, D.H.; Schulman, J.N.; Dunlap, H.L.; de los Santos, H.J.

Book ID: 114538716
Publisher: IEEE
Year: 2001
Tongue: English
Weight: 70 KB
Volume: 48
Category: Article
ISSN: 0018-9383
DOI: 10.1109/16.925263

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