Fabrication of MEMS actuators from the BEOL of a 0.25μm BiCMOS technology platform

Cost-effective integration of an FN-prog

Cost-effective integration of an FN-programmed embedded flash memory into a 0.25 μm SiGe:C RF-BiCMOS technology

✍ A. Fox; K.E. Ehwald; P. Schley; R. Barth; S. Marschmeyer; C. Wolf; V.E. Stikanov 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 397 KB

This paper presents a process technology for cost-effective integration of low-power flash memories into a 0.25 mm, high performance SiGe:C RF-BiCMOS process. Only four additional lithographic steps are used on top of the baseline BiCMOS process, leading to in total 23 mask levels for the BiCMOS/emb

[IEEE 1997 Bipolar/BiCMOS Circuits and T

[IEEE 1997 Bipolar/BiCMOS Circuits and Technology Meeting - Minneapolis, MN, USA (28-30 Sept. 1997)] Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting - Statistical modeling for a 0.6 μm BiCMOS technology

✍ Power, J.A.; Kelly, S.C.; Griffith, E.C.; Doyle, D.; O'Neill, M. 📂 Article 📅 1997 🏛 IEEE 🌐 English ⚖ 418 KB

This Text On Bipolar And Bicmos Circuits And Technology Covers: Design; Performance; Fabrication; Testing; Application; Integrated Circuits; Phenomena; Discrete Devices; Radio Frequency Design; Innovative Packaging; Device Physics, Modelling And Simulation; Cad Tools; And Power Devices And Ics.

[IEEE 1997 Bipolar/BiCMOS Circuits and T

[IEEE 1997 Bipolar/BiCMOS Circuits and Technology Meeting - Minneapolis, MN, USA (28-30 Sept. 1997)] Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting - An advanced 0.25-μm BiCMOS process integration technology for multi-GHz communication LSIs

✍ Kinoshita, Y.; Suzuki, H.; Nakamura, S.; Fukaishi, M.; Tajima, A.; Sucmura, Y.; 📂 Article 📅 1997 🏛 IEEE 🌐 English ⚖ 369 KB

This Text On Bipolar And Bicmos Circuits And Technology Covers: Design; Performance; Fabrication; Testing; Application; Integrated Circuits; Phenomena; Discrete Devices; Radio Frequency Design; Innovative Packaging; Device Physics, Modelling And Simulation; Cad Tools; And Power Devices And Ics.

[IEEE 1997 Bipolar/BiCMOS Circuits and T

[IEEE 1997 Bipolar/BiCMOS Circuits and Technology Meeting - Minneapolis, MN, USA (28-30 Sept. 1997)] Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting - A 0.7 μm linear BiCMOS/DMOS technology for mixed-signal/power applications

✍ Smith, J.; Tessmer, A.; Springer, L.; Madhani, P.; Erdeljac, J.; Mitros, J.; Efl 📂 Article 📅 1997 🏛 IEEE 🌐 English ⚖ 265 KB

This Text On Bipolar And Bicmos Circuits And Technology Covers: Design; Performance; Fabrication; Testing; Application; Integrated Circuits; Phenomena; Discrete Devices; Radio Frequency Design; Innovative Packaging; Device Physics, Modelling And Simulation; Cad Tools; And Power Devices And Ics.

[IEEE 1999 Bipolar/BiCMOS Circuits and T

[IEEE 1999 Bipolar/BiCMOS Circuits and Technology Meeting - Minneapolis, MN, USA (26-28 Sept. 1999)] Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024) - BiCMOS6G: a high performance 0.35 μm SiGe BiCMOS technology for wireless applications

✍ Monroy, A.; Laurens, W.; Marty, M.; Dutartre, D.; Gloria, D.; Carbonero, J.L.; P 📂 Article 📅 1999 🏛 IEEE ⚖ 466 KB

[IEEE 1996 BIPOLAR/BiCMOS Circuits and T

[IEEE 1996 BIPOLAR/BiCMOS Circuits and Technology Meeting - Minneapolis, MN, USA (29 Sept.-1 Oct. 1996)] Proceedings of the 1996 BIPOLAR/BiCMOS Circuits and Technology Meeting - Process integration technologies for a 0.3 μm BiCMOS SRAM with 1.5 V operation

✍ Suzuki, H.; Yoshida, H.; Yamazaki, T.; Takeda, K.; Kuhara, S.; Toyoshima, H. 📂 Article 📅 1996 🏛 IEEE ⚖ 346 KB