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Fabrication of epitaxial conductive LaNiO3 films on different substrates by pulsed laser ablation

โœ Scribed by Jun Zhu; Liang Zheng; Ying Zhang; Xian Hua Wei; Wen Bo Luo; Yan Rong Li

Book ID
113781942
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
914 KB
Volume
100
Category
Article
ISSN
0254-0584

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We report the preparation of arsenic-doped ZnO films on silicon(1 0 0) using ZnO/As 2 O 3 targets by pulsed laser ablation. As 2 O 3 was used as a p-type dopant source material for arsenic doping in ZnO. Hall effect measurements show that the stable p-type films with hole carrier concentration of ab