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Fabrication of Cu(In,Ga)Se2thin films by a combination of mechanochemical and screen-printing/sintering processes

✍ Scribed by Wada, T. ;Matsuo, Y. ;Nomura, S. ;Nakamura, Y. ;Miyamura, A. ;Chiba, Y. ;Yamada, A. ;Konagai, M.


Book ID
105364048
Publisher
John Wiley and Sons
Year
2006
Tongue
English
Weight
525 KB
Volume
203
Category
Article
ISSN
0031-8965

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✦ Synopsis


Abstract

We prepared fine Cu(In,Ga)Se~2~ (CIGS) powder suitable for screen printing using a mechanochemical process. Particulate precursors were deposited in a thin layer by a screen‐printing technique, the remaining organic solvent was removed from the screen‐printed CIGS film and finally the porous precursor layer was sintered into a dense polycrystalline film by atmospheric‐pressure firing. The crystal structure of the film was analyzed by X‐ray diffraction and the microstructure was observed in a SEM. The thickness of the film was 5–10 μm with a grain size of about 2 μm. The films were also observed in a TEM. The grain size of the as‐prepared powder was less than 1 μm; however, it enlarged to 2–3 μm after firing at 575 °C under a Se ambient. Preliminary CIGS solar cells with our standard Al grid/B‐doped ZnO/i‐ZnO/ CdS/CIGS/Mo/soda‐lime glass structure were fabricated. An efficiency of 2.7%, a V ~oc~ of 0.325 V, a J ~sc~ of 28.3 mA/cm^2^ and a FF of 0.295 was obtained. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)


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## Abstract In this paper we report a new method for Cu(In,Ga)Se~2~ deposition for solar cell application. Differently from the common co‐evaporation process, an alterative approach for thin film Cu(In,Ga)Se~2~ has been tested: the sputtering deposition of metal elements combined with the selenium