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Fabrication of 0.1-μm planar-doped pseudomorphic HEMT's using a PECVD silicon nitride assisted process

✍ Scribed by G. Zou; W. De Raedt; M. Van Hove; M. Van Rossum; Y. Jin; H. Launois


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
263 KB
Volume
19
Category
Article
ISSN
0167-9317

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