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Fabrication and thermal-chemical stability of magnetoresistive random-access memory cells using α-Fe/sub 2/O/sub 3/ bottom spin valves

✍ Scribed by Bae, S.; Zurn, S.; Egelhoff, W.F.; Chen, P.J.; Sheppard, L.; Torok, E.J.; Judy, J.H.

Book ID
120591032
Publisher
IEEE
Year
2001
Tongue
English
Weight
225 KB
Volume
37
Category
Article
ISSN
0018-9464

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